j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbf J113 ? n-channel switch ? 2012 fairchild semiconductor corporation www.fairchildsemi.com j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 rev. b0 1 august 2012 j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 n-channel switch features ? this device is designed for low level analog switching, sa mple and hold circuits and chopper stabilized amplifiers. ? sourced from process 51. ? source & drain are interchangeable. absolute maximum ratings* t a = 25 ? c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics t a = 25 ? c unless otherwise noted * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06". symbol parameter value units v dg drain-gate voltage 35 v v gs gate-source voltage -35 v i gf forward gate current 50 ma t j, t stg operating and storage junction temperature range -55 to +150 ? c symbol parameter max. units j111-113 *mmbfj111-113 p d total device dissipation derate above 25 ? c 625 5.0 350 2.8 mw mw/ ? c r ? jc thermal resistance, junction to case 125 ? c/w r ? ja thermal resistance, junction to ambient 357 556 ? c/w j111 mmbfj111 sot-23 mark: mmbfj111 - 6p d s j112 mmbfj112 g s d to-92 J113 mmbfj112_sb51338 mmbfJ113 g mmbfj112 - 6r mmbfj112_sb51338 - 6r mmbfJ113 - 6s note: source & drain are interchangeable.
j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbf J113 ? n-channel switch ? 2012 fairchild semiconductor corporation www.fairchildsemi.com j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 rev. b0 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width ? 300 ? s, duty cycle ? 3.0% typical performance characteristics symbol parameter test condition min. typ. max. units off characteristics bv (br)gss gate-source breakdown voltage i g = -1.0 ? a, v ds = 0 -35 v i gss gate reverse current v gs = -15v, v ds = 0 -1.0 na v gs(off) gate-source cutoff voltage v ds = 5.0v, i d = 1.0 ? a 111 112 mmbfj112_sb51338 113 -3.0 -1.0 -3.0 -0.5 -10 -5.0 -5.0 -3.0 v v v v i d(off) drain cutoff leakage current v ds = 5.0v, v gs = -10v 1.0 na on characteristics i dss zero-gate voltage drain current* v ds = 15v, i gs = 0 111 112 113 20 5.0 2.0 ma ma ma r ds(on) drain-source on resistance v ds ? 0.1v, v gs = 0 111 112 113 30 50 100 ? ? ? small signal characteristics c dg(on) c sg(on) drain gate & source gate on capacitance v ds = 0, v gs = 0, f = 1.0mhz 28 pf c dg(off) drain-gate off capacitance v ds = 0, v gs = -10v, f = 1.0mhz 5.0 pf c sg(off) source-gate off capacitance v ds = 0, v gs = -10v, f = 1.0mhz 5.0 pf r - drain "on" resistance ( ) parameter interactions 0.5 1 2 5 10 5 10 20 50 100 5 10 20 50 100 v - gate cutoff voltage (v) g - transcon ductance (mmhos) gs (off) fs i , g @ v = 15v, v = 0 pulsed r @ 1.0 ma, v = 0 v @ v = 15v, i = 1.0 na gs(off) dss r d i dss ds ds gs ds ds gs fs ds ds g fs _ _ _ _ _ common drain-source 0 0.4 0.8 1.2 1.6 2 0 2 4 6 8 10 v - drain-source voltage (v) i - drain current (ma) ds d - 0.4 v - 1.0 v - 0.8 v - 0.2 v - 0.6 v v = 0 v gs t = 25c typ v = - 2.0 v gs(off) a - 1.2 v - 1.4 v
j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbf J113 ? n-channel switch ? 2012 fairchild semiconductor corporation www.fairchildsemi.com j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 rev. b0 3 typical performance characteristics (continued) transfer characteristics -3 -2 -1 0 0 10 20 30 40 v - gate-source voltage (v) i - drain current (ma) gs d v = - 3.0 v gs(off) 25c v = 15 v ds v = - 2.0 v gs(off) 125c - 55c 25c - 55c 125c transfer characteristics -1.5 -1 -0.5 0 0 4 8 12 16 v - gate-source voltage (v) i - drain current (ma) gs d v = - 1.6 v gs(off) 25c v = 15 v ds v = - 1.1 v gs(off) 125c - 55c 25c - 55c 125c transfer characteristics -3 -2 -1 0 0 10 20 30 v - gate-source voltage (v) g - transconductance (mmhos) gs fs v = - 3.0 v gs(off) 25c v = 15 v ds v = - 2.0 v gs(off) 125c - 55c 25c 125c - 55c transfer characteristics -1.5 -1 -0.5 0 0 10 20 30 v - gate-source voltage (v) g - transconductance (mmhos) gs fs v = - 1.6 v gs(off) 25c v = 15 v ds v = - 1.1 v gs(off) 125c - 55c 25c 125c - 55c on resistance vs drain current 12 51020 50100 10 20 50 100 i - drain current (ma) r - drain "on" resistance d ds v typ = - 7.0v gs(off) 25c ( ) 125c 25c 125c r @ v = 0 gs - 55c ds v typ = - 2.0v gs(off) - 55c normalized drain resistance vs bias voltage 0 0.2 0.4 0.6 0.8 1 1 2 5 10 20 50 100 v /v - normalized gate-source voltage (v) r - normalized resistance gs ds r = ds v @ 5.0v, 10 a gs(off) r ds ________ v gs(off) v gs 1 - gs(off) ( ) ) ) ) )
j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbf J113 ? n-channel switch ? 2012 fairchild semiconductor corporation www.fairchildsemi.com j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 rev. b0 4 typical performance characteristics (continued) output conductance vs drain current 0.01 0.1 10 0.1 1 10 100 i - drain current (ma) g - output conductance ( mhos) d os v = - 5.0v gs(off) t = 25c f = 1.0 khz v = 5.0v dg a 10v 15v 20v 5.0v v = - 2.0v gs(off) v = - 0.85v gs(off) 10v 15v 20v 10v 15v 20v 5.0v transconductance vs drain current 0.1 1 10 1 10 100 i - drain current (ma) g - transconductance (mmhos) d fs v = - 1.4v gs(off) t = 25c v = 15v f = 1.0 khz a dg v = - 3.0v gs(off) capacitance vs voltage -20 -16 -12 -8 -4 0 1 10 100 v - gate-source voltage (v) c (c ) - capacitance (pf) rs gs is c (v = 0) is ds c (v = 20) is ds c (v = 0) rs ds f = 0.1 - 1.0 mhz noise voltage vs frequency 0.01 1 10 100 1 5 10 50 100 f - frequency (khz) e - noise voltage (nv / hz) n v = 15v bw = 6.0 hz @ f = 10 hz, 100 hz = 0.21 @ f 1.0 khz dg i = 10 ma d i = 1.0 ma d noise voltage vs current 0.01 0.1 1 10 1 10 100 i - drain current (ma) e - noise voltage (nv / hz) n v = 15v dg d f = 10 hz f = 100 hz f = 1.0 khz f = 10 khz f = 100 khz power dissipation vs ambient temperature 0255075100125150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbf J113 ? n-channel switch ? 2012 fairchild semiconductor corporation www.fairchildsemi.com j111 / j112 / J113 / mmbfj111 / mmbfj112 / mmbfj112_sb51338 / mmbfJ113 rev. b0 5 typical performance characteristics (continued) switching turn-on time vs gate-source voltage -10 -8 -6 -4 -2 0 0 5 10 15 20 25 v - gate-source cutoff voltage (v) t ,t - turn-on time (ns) r(on) gs(off) d(on) v = 3.0v t approx. i independent dd d r v = 3.0v t = 25c gs(off) a i = 6.6 ma v = -12v d gs t r (on) t d (on) 2.5 ma - 6.0v switching turn-off time vs drain current 0246810 0 20 40 60 80 100 i - drain current (ma) t ,t - turn-off time (ns) d d(off) off t = 25c v = 3.0v v = -12v t device v independent gs(off) a dd gs d(off) v = -2.2v gs(off) - 4.0v - 7.5v t d(off) t (off)
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